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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505277/ https://www.ncbi.nlm.nih.gov/pubmed/36144142 http://dx.doi.org/10.3390/mi13091519 |