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Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates
In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-doped GaN thin films on interfacial designed sapphire substrates. The scattering cross-section of the periodic resonant structure was evaluated by using the finite difference time domain (FDTD) method and was fou...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505499/ https://www.ncbi.nlm.nih.gov/pubmed/36145026 http://dx.doi.org/10.3390/nano12183238 |
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author | Xu, Long Cao, Yuehan Song, Tianwei Xu, Caixia |
author_facet | Xu, Long Cao, Yuehan Song, Tianwei Xu, Caixia |
author_sort | Xu, Long |
collection | PubMed |
description | In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-doped GaN thin films on interfacial designed sapphire substrates. The scattering cross-section of the periodic resonant structure was evaluated by using the finite difference time domain (FDTD) method and was found to be beneficial for reducing the threshold and enhancing the resonant lasing emission within the periodic structures. Compared with undoped and Si-doped GaN thin films, p-type Mg-doped GaN thin films demonstrated a better lasing emission performance. The lasing energy level system and defect densities played vital roles in the lasing emission. This work is beneficial to the realization of multifunctional applications in optoelectronic devices. |
format | Online Article Text |
id | pubmed-9505499 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-95054992022-09-24 Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates Xu, Long Cao, Yuehan Song, Tianwei Xu, Caixia Nanomaterials (Basel) Article In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-doped GaN thin films on interfacial designed sapphire substrates. The scattering cross-section of the periodic resonant structure was evaluated by using the finite difference time domain (FDTD) method and was found to be beneficial for reducing the threshold and enhancing the resonant lasing emission within the periodic structures. Compared with undoped and Si-doped GaN thin films, p-type Mg-doped GaN thin films demonstrated a better lasing emission performance. The lasing energy level system and defect densities played vital roles in the lasing emission. This work is beneficial to the realization of multifunctional applications in optoelectronic devices. MDPI 2022-09-18 /pmc/articles/PMC9505499/ /pubmed/36145026 http://dx.doi.org/10.3390/nano12183238 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Xu, Long Cao, Yuehan Song, Tianwei Xu, Caixia Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates |
title | Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates |
title_full | Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates |
title_fullStr | Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates |
title_full_unstemmed | Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates |
title_short | Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates |
title_sort | resonant lasing emission in undoped and mg-doped gallium nitride thin films on interfacial periodic patterned sapphire substrates |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505499/ https://www.ncbi.nlm.nih.gov/pubmed/36145026 http://dx.doi.org/10.3390/nano12183238 |
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