Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers under Varying Reactive Gas Conditions

In a single process run, an amorphous silicon oxynitride layer was grown, which includes the entire transition from oxide to nitride. The variation of the optical properties and the thickness of the layer was characterized by Spectroscopic Ellipsometry (SE) measurements, while the elemental composit...

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Detalles Bibliográficos
Autores principales: Hegedüs, Nikolett, Balázsi, Csaba, Kolonits, Tamás, Olasz, Dániel, Sáfrán, György, Serényi, Miklós, Balázsi, Katalin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9506354/
https://www.ncbi.nlm.nih.gov/pubmed/36143625
http://dx.doi.org/10.3390/ma15186313

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9506354/
https://www.ncbi.nlm.nih.gov/pubmed/36143625
http://dx.doi.org/10.3390/ma15186313

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