Oxygen scavenging of HfZrO(2)-based capacitors for improving ferroelectric properties

HfO(2)-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal–oxide–semiconductor technology. However, in the metal/FE/insulator/se...

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Detalles Bibliográficos
Autores principales: Kim, Bong Ho, Kuk, Song-hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Geum, Dae-Myeong, Baek, Seung-Hyub, Kim, Sang Hyeon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9514567/
https://www.ncbi.nlm.nih.gov/pubmed/36285215
http://dx.doi.org/10.1039/d2na00533f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9514567/
https://www.ncbi.nlm.nih.gov/pubmed/36285215
http://dx.doi.org/10.1039/d2na00533f

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