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Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis

[Image: see text] Identification and evaluation of defect levels in low-dimensional materials is an important aspect in quantum science. In this article, we report a facile synthesis method of low-dimensional hexagonal boron nitride (h-BN) and study light emission characteristics due to the defects....

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Autores principales: Sunny, Ashly, Balapure, Aniket, Ganesan, Ramakrishnan, Thamankar, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9520545/
https://www.ncbi.nlm.nih.gov/pubmed/36188247
http://dx.doi.org/10.1021/acsomega.2c02884
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author Sunny, Ashly
Balapure, Aniket
Ganesan, Ramakrishnan
Thamankar, R.
author_facet Sunny, Ashly
Balapure, Aniket
Ganesan, Ramakrishnan
Thamankar, R.
author_sort Sunny, Ashly
collection PubMed
description [Image: see text] Identification and evaluation of defect levels in low-dimensional materials is an important aspect in quantum science. In this article, we report a facile synthesis method of low-dimensional hexagonal boron nitride (h-BN) and study light emission characteristics due to the defects. The thermal annealing procedure is optimized to obtain clean multilayered h-BN as revealed by transmission electron microscopy. UV–vis spectroscopy shows the optical energy gap of 5.28 eV, which is comparable to the reported energy gap for exfoliated, clean h-BN samples. X-ray photoelectron spectroscopy reveals the location of the valence band edge at 2 eV. The optimized synthesis route of h-BN generates two kinds of defects, which are characterized using room-temperature photoluminescence (PL) measurements. The defects emit light at 4.18 eV [deep-UV (DUV)] and 3.44 eV (UV) photons. The intensity of PL has an oscillatory dependence on the excitation energy for the defect emitting DUV light. A series of spectral lines are observed with the energy ranging between 2.56 and 3.44 eV. The average peak-to-peak energy separation is about 125 meV. The locations of the spectral lines can be modeled using Franck–Condon-type transition and associated with displaced harmonic oscillator approximation. Our facile route gives an easier approach to prepare clean h-BN, which is essential for classical two-dimensional material-based electronics and single-photon-based quantum devices.
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spelling pubmed-95205452022-09-30 Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis Sunny, Ashly Balapure, Aniket Ganesan, Ramakrishnan Thamankar, R. ACS Omega [Image: see text] Identification and evaluation of defect levels in low-dimensional materials is an important aspect in quantum science. In this article, we report a facile synthesis method of low-dimensional hexagonal boron nitride (h-BN) and study light emission characteristics due to the defects. The thermal annealing procedure is optimized to obtain clean multilayered h-BN as revealed by transmission electron microscopy. UV–vis spectroscopy shows the optical energy gap of 5.28 eV, which is comparable to the reported energy gap for exfoliated, clean h-BN samples. X-ray photoelectron spectroscopy reveals the location of the valence band edge at 2 eV. The optimized synthesis route of h-BN generates two kinds of defects, which are characterized using room-temperature photoluminescence (PL) measurements. The defects emit light at 4.18 eV [deep-UV (DUV)] and 3.44 eV (UV) photons. The intensity of PL has an oscillatory dependence on the excitation energy for the defect emitting DUV light. A series of spectral lines are observed with the energy ranging between 2.56 and 3.44 eV. The average peak-to-peak energy separation is about 125 meV. The locations of the spectral lines can be modeled using Franck–Condon-type transition and associated with displaced harmonic oscillator approximation. Our facile route gives an easier approach to prepare clean h-BN, which is essential for classical two-dimensional material-based electronics and single-photon-based quantum devices. American Chemical Society 2022-09-15 /pmc/articles/PMC9520545/ /pubmed/36188247 http://dx.doi.org/10.1021/acsomega.2c02884 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Sunny, Ashly
Balapure, Aniket
Ganesan, Ramakrishnan
Thamankar, R.
Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
title Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
title_full Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
title_fullStr Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
title_full_unstemmed Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
title_short Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
title_sort room-temperature deep-uv photoluminescence from low-dimensional hexagonal boron nitride prepared using a facile synthesis
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9520545/
https://www.ncbi.nlm.nih.gov/pubmed/36188247
http://dx.doi.org/10.1021/acsomega.2c02884
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