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A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
ABSTRACT: In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Nature Singapore
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9526780/ https://www.ncbi.nlm.nih.gov/pubmed/36182997 http://dx.doi.org/10.1186/s40580-022-00333-7 |
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author | Jung, Minhyun Gaddam, Venkateswarlu Jeon, Sanghun |
author_facet | Jung, Minhyun Gaddam, Venkateswarlu Jeon, Sanghun |
author_sort | Jung, Minhyun |
collection | PubMed |
description | ABSTRACT: In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors, ferroelectric random-access memory, and dynamic random-access memory (DRAM) cell capacitors is ongoing. To operate high-performance computing devices, high-density, high-speed, and reliable memory devices such as DRAMs are required. Consequently, considerable attention has been devoted to the enhanced high dielectric constant and reduced equivalent oxide thickness (EOT) of DRAM cell capacitors. The advancement of ferroelectric hafnia has enabled the development of various devices, such as ferroelectric memories, piezoelectric sensors, and energy harvesters. Therefore, in this review, we focus the morphotropic phase boundary (MPB) between ferroelectric orthorhombic and tetragonal phases, where we can achieve a high dielectric constant and thereby reduce the EOT. We also present the role of the MPB in perovskite and fluorite structures as well as the history of the MPB phase. We also address the different approaches for achieving the MPB phase in a hafnia material system. Subsequently, we review the critical issues in DRAM technology using hafnia materials. Finally, we present various applications of the hafnia material system near the MPB, such as memory, sensors, and energy harvesters. GRAPHICAL ABSTRACT: [Image: see text] |
format | Online Article Text |
id | pubmed-9526780 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Springer Nature Singapore |
record_format | MEDLINE/PubMed |
spelling | pubmed-95267802022-10-03 A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology Jung, Minhyun Gaddam, Venkateswarlu Jeon, Sanghun Nano Converg Review ABSTRACT: In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors, ferroelectric random-access memory, and dynamic random-access memory (DRAM) cell capacitors is ongoing. To operate high-performance computing devices, high-density, high-speed, and reliable memory devices such as DRAMs are required. Consequently, considerable attention has been devoted to the enhanced high dielectric constant and reduced equivalent oxide thickness (EOT) of DRAM cell capacitors. The advancement of ferroelectric hafnia has enabled the development of various devices, such as ferroelectric memories, piezoelectric sensors, and energy harvesters. Therefore, in this review, we focus the morphotropic phase boundary (MPB) between ferroelectric orthorhombic and tetragonal phases, where we can achieve a high dielectric constant and thereby reduce the EOT. We also present the role of the MPB in perovskite and fluorite structures as well as the history of the MPB phase. We also address the different approaches for achieving the MPB phase in a hafnia material system. Subsequently, we review the critical issues in DRAM technology using hafnia materials. Finally, we present various applications of the hafnia material system near the MPB, such as memory, sensors, and energy harvesters. GRAPHICAL ABSTRACT: [Image: see text] Springer Nature Singapore 2022-10-01 /pmc/articles/PMC9526780/ /pubmed/36182997 http://dx.doi.org/10.1186/s40580-022-00333-7 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Review Jung, Minhyun Gaddam, Venkateswarlu Jeon, Sanghun A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology |
title | A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology |
title_full | A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology |
title_fullStr | A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology |
title_full_unstemmed | A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology |
title_short | A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology |
title_sort | review on morphotropic phase boundary in fluorite-structure hafnia towards dram technology |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9526780/ https://www.ncbi.nlm.nih.gov/pubmed/36182997 http://dx.doi.org/10.1186/s40580-022-00333-7 |
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