A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

ABSTRACT: In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors...

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Detalles Bibliográficos
Autores principales: Jung, Minhyun, Gaddam, Venkateswarlu, Jeon, Sanghun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9526780/
https://www.ncbi.nlm.nih.gov/pubmed/36182997
http://dx.doi.org/10.1186/s40580-022-00333-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9526780/
https://www.ncbi.nlm.nih.gov/pubmed/36182997
http://dx.doi.org/10.1186/s40580-022-00333-7

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