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A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
ABSTRACT: In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer Nature Singapore
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9526780/ https://www.ncbi.nlm.nih.gov/pubmed/36182997 http://dx.doi.org/10.1186/s40580-022-00333-7 |