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Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (I(on)/I(off)) ratio...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9537168/ https://www.ncbi.nlm.nih.gov/pubmed/36202953 http://dx.doi.org/10.1038/s41598-022-21092-9 |