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Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi(2)TeO(5) grow...

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Detalles Bibliográficos
Autores principales: Han, Mengjiao, Wang, Cong, Niu, Kangdi, Yang, Qishuo, Wang, Chuanshou, Zhang, Xi, Dai, Junfeng, Wang, Yujia, Ma, Xiuliang, Wang, Junling, Kang, Lixing, Ji, Wei, Lin, Junhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9537171/
https://www.ncbi.nlm.nih.gov/pubmed/36202850
http://dx.doi.org/10.1038/s41467-022-33617-x
Descripción
Sumario:Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi(2)TeO(5) grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180° domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi(2)TeO(5) offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics.