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Charge-Transfer Complexes in Organic Field-Effect Transistors: Superior Suitability for Surface Doping

[Image: see text] We demonstrate the key role of charge-transfer complexes in surface doping as a successful methodology for improving channel field-effect mobility and reducing the threshold voltage in organic field-effect transistors (OFETs), as well as raising the film conductivity. Demonstrated...

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Detalles Bibliográficos
Autores principales: Babuji, Adara, Cazorla, Alba, Solano, Eduardo, Habenicht, Carsten, Kleemann, Hans, Ocal, Carmen, Leo, Karl, Barrena, Esther
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9542699/
https://www.ncbi.nlm.nih.gov/pubmed/36126171
http://dx.doi.org/10.1021/acsami.2c09168
Descripción
Sumario:[Image: see text] We demonstrate the key role of charge-transfer complexes in surface doping as a successful methodology for improving channel field-effect mobility and reducing the threshold voltage in organic field-effect transistors (OFETs), as well as raising the film conductivity. Demonstrated here for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) doped with 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F(6)TCNNQ), channel doping by sequential deposition is consistently rationalized by the development of a cocrystalline structure that forms and evolves from the surface of the organic semiconductor film without trading the thin-film structure integrity. This scenario brings higher benefits for the device operation than doping by codeposition, where a decrease in the field-effect mobility of the device, even for a dopant content of only 1 mol %, makes codeposition less suitable. Insight into the structural and electronic properties of the interface satisfactorily explains the improved performance of OFETs upon the incorporation of the dopant and provides an understanding of the mechanism of doping in this system.