Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses

Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant. In this study, a new interference phenomenon was observed whe...

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Autores principales: Zhao, Jingtao, Chen, Quanyou, Chen, Chaoyang, Chen, Zhidong, Liu, Zhong, Zhao, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9547885/
https://www.ncbi.nlm.nih.gov/pubmed/36209287
http://dx.doi.org/10.1038/s41598-022-21324-y
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author Zhao, Jingtao
Chen, Quanyou
Chen, Chaoyang
Chen, Zhidong
Liu, Zhong
Zhao, Gang
author_facet Zhao, Jingtao
Chen, Quanyou
Chen, Chaoyang
Chen, Zhidong
Liu, Zhong
Zhao, Gang
author_sort Zhao, Jingtao
collection PubMed
description Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant. In this study, a new interference phenomenon was observed when the microwave pulses were injected into the gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier through the output port. We investigated the relationship between the peak power of reverse injection microwave pulses and the duration or the amplitude of the interference by effect experiments. The interference duration could reach the magnitude of millisecond. Deep traps in GaN HEMT power amplifiers are proved to be the cause of this interference effects.
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spelling pubmed-95478852022-10-10 Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses Zhao, Jingtao Chen, Quanyou Chen, Chaoyang Chen, Zhidong Liu, Zhong Zhao, Gang Sci Rep Article Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant. In this study, a new interference phenomenon was observed when the microwave pulses were injected into the gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier through the output port. We investigated the relationship between the peak power of reverse injection microwave pulses and the duration or the amplitude of the interference by effect experiments. The interference duration could reach the magnitude of millisecond. Deep traps in GaN HEMT power amplifiers are proved to be the cause of this interference effects. Nature Publishing Group UK 2022-10-08 /pmc/articles/PMC9547885/ /pubmed/36209287 http://dx.doi.org/10.1038/s41598-022-21324-y Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Zhao, Jingtao
Chen, Quanyou
Chen, Chaoyang
Chen, Zhidong
Liu, Zhong
Zhao, Gang
Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
title Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
title_full Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
title_fullStr Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
title_full_unstemmed Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
title_short Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
title_sort interference effects in gan high electron mobility transistor power amplifier induced by microwave pulses
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9547885/
https://www.ncbi.nlm.nih.gov/pubmed/36209287
http://dx.doi.org/10.1038/s41598-022-21324-y
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