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Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant. In this study, a new interference phenomenon was observed whe...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9547885/ https://www.ncbi.nlm.nih.gov/pubmed/36209287 http://dx.doi.org/10.1038/s41598-022-21324-y |