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KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance

The magnetic semiconductor in a two-dimensional system is a major subject for both theoretical and experimental investigations. Here we report the synthesis of a new quaternary manganese chalcogenide KMnCuTe(2), which shows layered structure and antiferromagnetic (AFM) semiconducting features. Singl...

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Autores principales: Sun, Fan, Liu, Zhao, Lin, Jiawei, Deng, Jun, Guo, Zhongnan, Yuan, Wenxia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9552607/
https://www.ncbi.nlm.nih.gov/pubmed/36320726
http://dx.doi.org/10.1039/d2ra04789f
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author Sun, Fan
Liu, Zhao
Lin, Jiawei
Deng, Jun
Guo, Zhongnan
Yuan, Wenxia
author_facet Sun, Fan
Liu, Zhao
Lin, Jiawei
Deng, Jun
Guo, Zhongnan
Yuan, Wenxia
author_sort Sun, Fan
collection PubMed
description The magnetic semiconductor in a two-dimensional system is a major subject for both theoretical and experimental investigations. Here we report the synthesis of a new quaternary manganese chalcogenide KMnCuTe(2), which shows layered structure and antiferromagnetic (AFM) semiconducting features. Single crystals of KMnCuTe(2) were obtained using a self-flux method and based on single-crystal X-ray diffraction, KMnCuTe(2) adopts the ThCr(2)Si(2)-type structure composed of edge-sharing tetrahedral layers separated by K(+) cations. The Mn and Cu atoms randomly distribute in the centre of tetrahedral units. Attributed to the large radius of Te, KMnCuTe(2) has large lattice parameters (a = 4.3115(3) Å and c = 14.9360(20) Å), leading to a long metal–metal distance (3.049 Å) in the tetrahedral layers. Based on the experiments and theoretical calculations, KMnCuTe(2) exhibits a G-type AFM interaction with the transition temperature at around 225 K and an indirect semiconducting nature with the band gap of 0.95 eV. The magnetic semiconducting property of KMnCuTe(2) is unique in AMnMCh(2) systems (A = Li, Na, K, M = Cu, Ag and Ch = S, Se, Te), which could be associated with the large metal–metal distance. Our work not only highlights the role of metal–metal interactions on regulating the properties of ThCr(2)Si(2)-type compounds, but also provides a feasible strategy to obtain the layered magnetic semiconductor.
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spelling pubmed-95526072022-10-31 KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance Sun, Fan Liu, Zhao Lin, Jiawei Deng, Jun Guo, Zhongnan Yuan, Wenxia RSC Adv Chemistry The magnetic semiconductor in a two-dimensional system is a major subject for both theoretical and experimental investigations. Here we report the synthesis of a new quaternary manganese chalcogenide KMnCuTe(2), which shows layered structure and antiferromagnetic (AFM) semiconducting features. Single crystals of KMnCuTe(2) were obtained using a self-flux method and based on single-crystal X-ray diffraction, KMnCuTe(2) adopts the ThCr(2)Si(2)-type structure composed of edge-sharing tetrahedral layers separated by K(+) cations. The Mn and Cu atoms randomly distribute in the centre of tetrahedral units. Attributed to the large radius of Te, KMnCuTe(2) has large lattice parameters (a = 4.3115(3) Å and c = 14.9360(20) Å), leading to a long metal–metal distance (3.049 Å) in the tetrahedral layers. Based on the experiments and theoretical calculations, KMnCuTe(2) exhibits a G-type AFM interaction with the transition temperature at around 225 K and an indirect semiconducting nature with the band gap of 0.95 eV. The magnetic semiconducting property of KMnCuTe(2) is unique in AMnMCh(2) systems (A = Li, Na, K, M = Cu, Ag and Ch = S, Se, Te), which could be associated with the large metal–metal distance. Our work not only highlights the role of metal–metal interactions on regulating the properties of ThCr(2)Si(2)-type compounds, but also provides a feasible strategy to obtain the layered magnetic semiconductor. The Royal Society of Chemistry 2022-10-11 /pmc/articles/PMC9552607/ /pubmed/36320726 http://dx.doi.org/10.1039/d2ra04789f Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Sun, Fan
Liu, Zhao
Lin, Jiawei
Deng, Jun
Guo, Zhongnan
Yuan, Wenxia
KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance
title KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance
title_full KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance
title_fullStr KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance
title_full_unstemmed KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance
title_short KMnCuTe(2): a layered antiferromagnetic semiconductor with long metal–metal distance
title_sort kmncute(2): a layered antiferromagnetic semiconductor with long metal–metal distance
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9552607/
https://www.ncbi.nlm.nih.gov/pubmed/36320726
http://dx.doi.org/10.1039/d2ra04789f
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AT linjiawei kmncute2alayeredantiferromagneticsemiconductorwithlongmetalmetaldistance
AT dengjun kmncute2alayeredantiferromagneticsemiconductorwithlongmetalmetaldistance
AT guozhongnan kmncute2alayeredantiferromagneticsemiconductorwithlongmetalmetaldistance
AT yuanwenxia kmncute2alayeredantiferromagneticsemiconductorwithlongmetalmetaldistance