High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO(3) Thin Films

Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure...

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Detalles Bibliográficos
Autores principales: Ræder, Trygve M., Qin, Shuyu, Zachman, Michael J., Vasudevan, Rama K., Grande, Tor, Agar, Joshua C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9561770/
https://www.ncbi.nlm.nih.gov/pubmed/36031394
http://dx.doi.org/10.1002/advs.202201530

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9561770/
https://www.ncbi.nlm.nih.gov/pubmed/36031394
http://dx.doi.org/10.1002/advs.202201530

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