Pressure‐Induced Indirect‐Direct Bandgap Transition of CsPbBr(3) Single Crystal and Its Effect on Photoluminescence Quantum Yield (Adv. Sci. 29/2022)

CsPbBr(3) Single Crystal High pressure exerted on CsPbBr(3) single crystal using diamond anvil cell leads to improved photoluminescence intensity due to the decreased dynamic Rashba splitting. Application of higher pressure transforms it into a pure indirect bandgap phase, which can be maintained at...

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Detalles Bibliográficos
Autores principales: Gong, Junbo, Zhong, Hongxia, Gao, Chan, Peng, Jiali, Liu, Xinxing, Lin, Qianqian, Fang, Guojia, Yuan, Shengjun, Zhang, Zengming, Xiao, Xudong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
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Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9561865/
http://dx.doi.org/10.1002/advs.202270186
Descripción
Sumario:CsPbBr(3) Single Crystal High pressure exerted on CsPbBr(3) single crystal using diamond anvil cell leads to improved photoluminescence intensity due to the decreased dynamic Rashba splitting. Application of higher pressure transforms it into a pure indirect bandgap phase, which can be maintained at near‐ambient pressure. These phenomena provide a novel framework to understand the optoelectronic properties of perovskite materials. More details can be found in article number 2201554 by Junbo Gong, Zengming Zhang, Xudong Xiao, and co‐workers. [Image: see text]

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