High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (...

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Detalles Bibliográficos
Autores principales: Peverini, Francesca, Bizzarri, Marco, Boscardin, Maurizio, Calcagnile, Lucio, Caprai, Mirco, Caricato, Anna Paola, Cirrone, Giuseppe Antonio Pablo, Crivellari, Michele, Cuttone, Giacomo, Dunand, Sylvain, Fanò, Livio, Gianfelici, Benedetta, Hammad, Omar, Ionica, Maria, Kanxheri, Keida, Large, Matthew, Maruccio, Giuseppe, Menichelli, Mauro, Monteduro, Anna Grazia, Moscatelli, Francesco, Morozzi, Arianna, Pallotta, Stefania, Papi, Andrea, Passeri, Daniele, Petasecca, Marco, Petringa, Giada, Pis, Igor, Quarta, Gianluca, Rizzato, Silvia, Rossi, Alessandro, Rossi, Giulia, Scorzoni, Andrea, Soncini, Cristian, Servoli, Leonello, Tacchi, Silvia, Talamonti, Cinzia, Verzellesi, Giovanni, Wyrsch, Nicolas, Zema, Nicola, Pedio, Maddalena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565300/
https://www.ncbi.nlm.nih.gov/pubmed/36234601
http://dx.doi.org/10.3390/nano12193466

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