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Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance
Heterojunction Cu(In,Ga)Se(2) (CIGS) solar cells comprise a substrate/Mo/CIGS/CdS/i-ZnO/ZnO:Al. Here, Al-doped zinc oxide (AZO) films were deposited by magnetron sputtering, and the substrate temperature was optimized for CIGS solar cells with two types of CIGS light absorbers with different materia...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565514/ https://www.ncbi.nlm.nih.gov/pubmed/36234454 http://dx.doi.org/10.3390/nano12193326 |
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author | Park, Hyeonwook Alhammadi, Salh Minnam Reddy, Vasudeva Reddy Park, Chinho Kim, Woo Kyoung |
author_facet | Park, Hyeonwook Alhammadi, Salh Minnam Reddy, Vasudeva Reddy Park, Chinho Kim, Woo Kyoung |
author_sort | Park, Hyeonwook |
collection | PubMed |
description | Heterojunction Cu(In,Ga)Se(2) (CIGS) solar cells comprise a substrate/Mo/CIGS/CdS/i-ZnO/ZnO:Al. Here, Al-doped zinc oxide (AZO) films were deposited by magnetron sputtering, and the substrate temperature was optimized for CIGS solar cells with two types of CIGS light absorbers with different material properties fabricated by three-stage co-evaporation and two-step metallization followed by sulfurization after selenization (SAS). The microstructure and optoelectronic properties of the AZO thin films fabricated at different substrate temperatures (150–550 °C) were analyzed along with their effects on the CIGS solar cell performance. X-ray diffraction results confirmed that all the deposited AZO films have a hexagonal wurtzite crystal structure regardless of substrate temperature. The optical and electrical properties of the AZO films improved significantly with increasing substrate temperature. Photovoltaic performances of the two types of CIGS solar cells were influenced by changes in the AZO substrate temperature. For the three-stage co-evaporated CIGS cell, as the sputter-deposition temperature of the AZO layer was raised from 150 °C to 550 °C, the efficiencies of CIGS devices decreased monotonically, which suggests the optimum AZO deposition temperature is 150 °C. In contrast, the cell efficiency of CIGS devices fabricated using the two-step SAS-processed CIGS absorbers improved with increasing the AZO deposition temperature from 150 to 350 °C. However, the rise in AZO deposition temperature to 550 °C decreased the cell efficiency, indicating that the optimum AZO deposition temperature was 350 °C. The findings of this study provide insights for the efficient fabrication of CIGS solar cells considering the correlation between CIGS absorber characteristics and AZO layer deposition temperature. |
format | Online Article Text |
id | pubmed-9565514 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-95655142022-10-15 Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance Park, Hyeonwook Alhammadi, Salh Minnam Reddy, Vasudeva Reddy Park, Chinho Kim, Woo Kyoung Nanomaterials (Basel) Article Heterojunction Cu(In,Ga)Se(2) (CIGS) solar cells comprise a substrate/Mo/CIGS/CdS/i-ZnO/ZnO:Al. Here, Al-doped zinc oxide (AZO) films were deposited by magnetron sputtering, and the substrate temperature was optimized for CIGS solar cells with two types of CIGS light absorbers with different material properties fabricated by three-stage co-evaporation and two-step metallization followed by sulfurization after selenization (SAS). The microstructure and optoelectronic properties of the AZO thin films fabricated at different substrate temperatures (150–550 °C) were analyzed along with their effects on the CIGS solar cell performance. X-ray diffraction results confirmed that all the deposited AZO films have a hexagonal wurtzite crystal structure regardless of substrate temperature. The optical and electrical properties of the AZO films improved significantly with increasing substrate temperature. Photovoltaic performances of the two types of CIGS solar cells were influenced by changes in the AZO substrate temperature. For the three-stage co-evaporated CIGS cell, as the sputter-deposition temperature of the AZO layer was raised from 150 °C to 550 °C, the efficiencies of CIGS devices decreased monotonically, which suggests the optimum AZO deposition temperature is 150 °C. In contrast, the cell efficiency of CIGS devices fabricated using the two-step SAS-processed CIGS absorbers improved with increasing the AZO deposition temperature from 150 to 350 °C. However, the rise in AZO deposition temperature to 550 °C decreased the cell efficiency, indicating that the optimum AZO deposition temperature was 350 °C. The findings of this study provide insights for the efficient fabrication of CIGS solar cells considering the correlation between CIGS absorber characteristics and AZO layer deposition temperature. MDPI 2022-09-24 /pmc/articles/PMC9565514/ /pubmed/36234454 http://dx.doi.org/10.3390/nano12193326 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Park, Hyeonwook Alhammadi, Salh Minnam Reddy, Vasudeva Reddy Park, Chinho Kim, Woo Kyoung Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance |
title | Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance |
title_full | Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance |
title_fullStr | Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance |
title_full_unstemmed | Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance |
title_short | Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se(2) Solar Cell Performance |
title_sort | influence of the al-doped zno sputter-deposition temperature on cu(in,ga)se(2) solar cell performance |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565514/ https://www.ncbi.nlm.nih.gov/pubmed/36234454 http://dx.doi.org/10.3390/nano12193326 |
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