Cargando…

Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultr...

Descripción completa

Detalles Bibliográficos
Autores principales: Xie, Haowei, Kang, Chenxu, Iqbal, Muhammad Ahsan, Weng, Xiaoliang, Wu, Kewen, Tang, Wei, Qi, Lu, Zeng, Yu-Jia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565710/
https://www.ncbi.nlm.nih.gov/pubmed/36234488
http://dx.doi.org/10.3390/nano12193358
Descripción
Sumario:The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP(2)S(6) (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 10(4) A/W and 7.17 × 10(11) Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.