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A steep switching WSe(2) impact ionization field-effect transistor
The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slo...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9568662/ https://www.ncbi.nlm.nih.gov/pubmed/36241618 http://dx.doi.org/10.1038/s41467-022-33770-3 |