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A steep switching WSe(2) impact ionization field-effect transistor

The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slo...

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Detalles Bibliográficos
Autores principales:	Choi, Haeju, Li, Jinshu, Kang, Taeho, Kang, Chanwoo, Son, Hyeonje, Jeon, Jongwook, Hwang, Euyheon, Lee, Sungjoo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9568662/ https://www.ncbi.nlm.nih.gov/pubmed/36241618 http://dx.doi.org/10.1038/s41467-022-33770-3

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