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Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate

The material quality of III-nitrides is severely limited by the lack of cost-effective substrates with suitable lattice and thermal expansion coefficients. A suspended ultrathin silicon membrane substrate ([Formula: see text] 16 nm), fabricated by an easy process on SOI substrates, is thus designed...

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Detalles Bibliográficos
Autores principales: Wang, Kejia, Song, Yuzi, Zhang, Yichun, Zhang, Yunyan, Cheng, Zhiyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9569276/
https://www.ncbi.nlm.nih.gov/pubmed/36242653
http://dx.doi.org/10.1186/s11671-022-03732-1