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Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model
Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mech...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571005/ https://www.ncbi.nlm.nih.gov/pubmed/36234760 http://dx.doi.org/10.3390/molecules27196223 |
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author | Wu, Dan Zhang, Hechun Liu, Haochen Li, Wenhui Xiao, Xiangtian Shi, Kanming Ye, Taikang Sun, Jiayun Lin, Zhaowen Liu, Jing Qiu, Mingxia Ko Ko Kyaw, Aung Wang, Kai |
author_facet | Wu, Dan Zhang, Hechun Liu, Haochen Li, Wenhui Xiao, Xiangtian Shi, Kanming Ye, Taikang Sun, Jiayun Lin, Zhaowen Liu, Jing Qiu, Mingxia Ko Ko Kyaw, Aung Wang, Kai |
author_sort | Wu, Dan |
collection | PubMed |
description | Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes. |
format | Online Article Text |
id | pubmed-9571005 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-95710052022-10-17 Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model Wu, Dan Zhang, Hechun Liu, Haochen Li, Wenhui Xiao, Xiangtian Shi, Kanming Ye, Taikang Sun, Jiayun Lin, Zhaowen Liu, Jing Qiu, Mingxia Ko Ko Kyaw, Aung Wang, Kai Molecules Article Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes. MDPI 2022-09-22 /pmc/articles/PMC9571005/ /pubmed/36234760 http://dx.doi.org/10.3390/molecules27196223 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wu, Dan Zhang, Hechun Liu, Haochen Li, Wenhui Xiao, Xiangtian Shi, Kanming Ye, Taikang Sun, Jiayun Lin, Zhaowen Liu, Jing Qiu, Mingxia Ko Ko Kyaw, Aung Wang, Kai Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
title | Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
title_full | Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
title_fullStr | Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
title_full_unstemmed | Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
title_short | Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
title_sort | revealing the hidden mechanism of enhanced responsivity of doped p-i-n perovskite photodiodes via coupled opto-electronic model |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571005/ https://www.ncbi.nlm.nih.gov/pubmed/36234760 http://dx.doi.org/10.3390/molecules27196223 |
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