Development of a Broadband (100–240 MHz) Surface Acoustic Wave Emitter Devoted to the Non-Destructive Characterization of Sub-Micrometric Thin Films

In the ultrasonic non-destructive evaluation of thin films, it is essential to have ultrasonic transducers that are able to generate surface acoustic waves (SAW) of suitably high frequencies in a wide frequency range of between ten and several hundred megahertz. If the characterization is carried out with the transducer in contact with the sample, it is also necessary that the transducers provide a high level of mechanical displacement (>100 s pm). This level allows the wave to cross the transducer–sample interface and propagate over the distance of a few millimeters on the sample and be properly detected. In this paper, an emitter transducer formed of interdigitated chirp electrodes deposited on 128° Y-cut LiNbO(3) is proposed. It is shown that this solution efficiently enables the generation of SAW (displacement level up to 1 nm) in a frequency range of between 100 and 240 MHz. The electrical characterization and a displacement field analysis of SAW by laser Doppler vibrometry are presented. The transducer’s significant unidirectionality is demonstrated. Finally, the characterization of two titanium thin films deposited on silicon is presented as an example. A meaningful SAW velocity dispersion (~10 m/s) is obtained, which allows for the precise estimation (5% of relative error) of the submicrometer thickness of the layers (20 and 50 nm).