Cargando…
Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals
In this paper, we investigate, using X-ray Bragg diffraction imaging and defect selective etching, a new type of extended defect that occurs in ammonothermally grown gallium nitride (GaN) single crystals. This hexagonal “honeycomb” shaped defect is composed of bundles of parallel threading edge disl...
Autores principales: | Kirste, Lutz, Tran Thi Caliste, Thu Nhi, Weyher, Jan L., Smalc-Koziorowska, Julita, Zajac, Magdalena A., Kucharski, Robert, Sochacki, Tomasz, Grabianska, Karolina, Iwinska, Malgorzata, Detlefs, Carsten, Danilewsky, Andreas N., Bockowski, Michal, Baruchel, José |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572198/ https://www.ncbi.nlm.nih.gov/pubmed/36234338 http://dx.doi.org/10.3390/ma15196996 |
Ejemplares similares
-
Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed
por: Sochacki, Tomasz, et al.
Publicado: (2022) -
Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography
por: Kirste, Lutz, et al.
Publicado: (2021) -
Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
por: Sochacki, Tomasz, et al.
Publicado: (2023) -
Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN
por: Gaubas, E., et al.
Publicado: (2019) -
Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
por: Amilusik, Mikolaj, et al.
Publicado: (2022)