Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al(2)O(3) Bilayer Structure

In this work, the resistive switching behavior of bilayer ZnO/Al(2)O(3)-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffusion. Multilevel resistance states were mod...

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Detalles Bibliográficos
Autores principales: Mahata, Chandreswar, Park, Jongmin, Ismail, Muhammad, Kim, Dae Hwan, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572464/
https://www.ncbi.nlm.nih.gov/pubmed/36234005
http://dx.doi.org/10.3390/ma15196663

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572464/
https://www.ncbi.nlm.nih.gov/pubmed/36234005
http://dx.doi.org/10.3390/ma15196663

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