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Investigating the Correlation between the Microstructure and Electrical Properties of FeSbO(4) Ceramics

FeSbO(4) powder was prepared using the solid-state reaction method in this work. Afterward, the dense and porous ceramics were obtained by sintering the pressed powder calcined at temperatures of 900 and 1000 °C for 4 h. Rietveld profile analysis of the X-ray powder diffraction data showed that FeSb...

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Detalles Bibliográficos
Autores principales: Moraes, Carlos G. P., Matos, Robert S., dos Santos, Cledson, Ţălu, Ştefan, Attah-Baah, John M., Junior, Romualdo S. Silva, da Silva, Marcelo S., Rezende, Marcos V. S., Silva, Ronaldo S., Ferreira, Nilson S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9573354/
https://www.ncbi.nlm.nih.gov/pubmed/36233887
http://dx.doi.org/10.3390/ma15196555
Descripción
Sumario:FeSbO(4) powder was prepared using the solid-state reaction method in this work. Afterward, the dense and porous ceramics were obtained by sintering the pressed powder calcined at temperatures of 900 and 1000 °C for 4 h. Rietveld profile analysis of the X-ray powder diffraction data showed that FeSbO(4) adopts the trirutile-type structure (space group P4(2)/mnm, with a ≅ 4.63 Å and c ≅ 9.23 Å). SEM images showed that the powder calcined at 900 °C after being sintered at 1200 °C resulted in ceramics of higher crystallinity, larger grains, and consequently, low porosity. The dielectric properties were measured in the frequency range of 10(−1) Hz–1 MHz as a function of temperature (25–250 °C). The real (σ′) and imaginary (σ″) parts of the complex conductivity increase with rising annealing temperature for both samples. The real conductivity in the AC region for 𝑓 = 100 kHz was [Formula: see text] and [Formula: see text] for the ceramic samples obtained from the powder calcined at 900 (C-900) and 1000 °C (C-1000), respectively. Furthermore, the dielectric constants (k′) measured at room temperature and [Formula: see text] were [Formula: see text] (C-900) and [Formula: see text] (C-1000), while the activation energies of the grain region were E(a) = 0.53 eV and E(a) = 0.49 eV, respectively. Similar activation energy (E(a) = 0.52 eV and 0.49 eV) was also obtained by the brick-layer model and confirmed by the adjustment of activation energy by DC measurements which indicated an absence of the porosity influence on the parameter. Additionally, loss factor values were obtained to be equal to 3.8 (C-900) and 5.99 (C-1000) for measurements performed at 100 Hz, suggesting a contribution of the conductivity originated from the combination or accommodation of the pores in the grain boundary region. Our results prove that the microstructural factors that play a critical role in the electrical and dielectric properties are the average grain size and the porosity interspersed with the grain boundary region.