Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm(2) chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with...

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Detalles Bibliográficos
Autores principales: Romijn, Joost, Vollebregt, Sten, Middelburg, Luke M., Mansouri, Brahim El, van Zeijl, Henk W., May, Alexander, Erlbacher, Tobias, Leijtens, Johan, Zhang, Guoqi, Sarro, Pasqualina M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9592596/
https://www.ncbi.nlm.nih.gov/pubmed/36304906
http://dx.doi.org/10.1038/s41378-022-00446-3
Descripción
Sumario:This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm(2) chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

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