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Designing Inorganic Semiconductors with Cold‐Rolling Processability
While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9596854/ https://www.ncbi.nlm.nih.gov/pubmed/35981888 http://dx.doi.org/10.1002/advs.202203776 |
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author | Wang, Xu‐Dong Tan, Jieling Ouyang, Jian Zhang, Hang‐Ming Wang, Jiang‐Jing Wang, Yuecun Deringer, Volker L. Zhou, Jian Zhang, Wei Ma, En |
author_facet | Wang, Xu‐Dong Tan, Jieling Ouyang, Jian Zhang, Hang‐Ming Wang, Jiang‐Jing Wang, Yuecun Deringer, Volker L. Zhou, Jian Zhang, Wei Ma, En |
author_sort | Wang, Xu‐Dong |
collection | PubMed |
description | While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single‐crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material‐property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m(0.5) and 15 meV Å(−2), respectively. The findings open a new realm of possibility for alloy selection and design toward processing‐friendly group‐III chalcogenides for practical applications. |
format | Online Article Text |
id | pubmed-9596854 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-95968542022-10-27 Designing Inorganic Semiconductors with Cold‐Rolling Processability Wang, Xu‐Dong Tan, Jieling Ouyang, Jian Zhang, Hang‐Ming Wang, Jiang‐Jing Wang, Yuecun Deringer, Volker L. Zhou, Jian Zhang, Wei Ma, En Adv Sci (Weinh) Research Articles While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single‐crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material‐property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m(0.5) and 15 meV Å(−2), respectively. The findings open a new realm of possibility for alloy selection and design toward processing‐friendly group‐III chalcogenides for practical applications. John Wiley and Sons Inc. 2022-08-18 /pmc/articles/PMC9596854/ /pubmed/35981888 http://dx.doi.org/10.1002/advs.202203776 Text en © 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Wang, Xu‐Dong Tan, Jieling Ouyang, Jian Zhang, Hang‐Ming Wang, Jiang‐Jing Wang, Yuecun Deringer, Volker L. Zhou, Jian Zhang, Wei Ma, En Designing Inorganic Semiconductors with Cold‐Rolling Processability |
title | Designing Inorganic Semiconductors with Cold‐Rolling Processability |
title_full | Designing Inorganic Semiconductors with Cold‐Rolling Processability |
title_fullStr | Designing Inorganic Semiconductors with Cold‐Rolling Processability |
title_full_unstemmed | Designing Inorganic Semiconductors with Cold‐Rolling Processability |
title_short | Designing Inorganic Semiconductors with Cold‐Rolling Processability |
title_sort | designing inorganic semiconductors with cold‐rolling processability |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9596854/ https://www.ncbi.nlm.nih.gov/pubmed/35981888 http://dx.doi.org/10.1002/advs.202203776 |
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