Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In [Formula: see text] Al [Formula: see text] As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The...

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Detalles Bibliográficos
Autores principales: Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico Guido, Fedorov, Alexey, Carminati, Giuseppe, Lambardi, Davide, Pedrini, Jacopo, Vitiello, Elisa, Pezzoli, Fabio, Bietti, Sergio, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607536/
https://www.ncbi.nlm.nih.gov/pubmed/36296766
http://dx.doi.org/10.3390/nano12203571
Descripción
Sumario:We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In [Formula: see text] Al [Formula: see text] As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

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