Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In [Formula: see text] Al [Formula: see text] As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The...

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Autores principales: Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico Guido, Fedorov, Alexey, Carminati, Giuseppe, Lambardi, Davide, Pedrini, Jacopo, Vitiello, Elisa, Pezzoli, Fabio, Bietti, Sergio, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607536/
https://www.ncbi.nlm.nih.gov/pubmed/36296766
http://dx.doi.org/10.3390/nano12203571
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author Tuktamyshev, Artur
Vichi, Stefano
Cesura, Federico Guido
Fedorov, Alexey
Carminati, Giuseppe
Lambardi, Davide
Pedrini, Jacopo
Vitiello, Elisa
Pezzoli, Fabio
Bietti, Sergio
Sanguinetti, Stefano
author_facet Tuktamyshev, Artur
Vichi, Stefano
Cesura, Federico Guido
Fedorov, Alexey
Carminati, Giuseppe
Lambardi, Davide
Pedrini, Jacopo
Vitiello, Elisa
Pezzoli, Fabio
Bietti, Sergio
Sanguinetti, Stefano
author_sort Tuktamyshev, Artur
collection PubMed
description We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In [Formula: see text] Al [Formula: see text] As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.
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spelling pubmed-96075362022-10-28 Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates Tuktamyshev, Artur Vichi, Stefano Cesura, Federico Guido Fedorov, Alexey Carminati, Giuseppe Lambardi, Davide Pedrini, Jacopo Vitiello, Elisa Pezzoli, Fabio Bietti, Sergio Sanguinetti, Stefano Nanomaterials (Basel) Article We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In [Formula: see text] Al [Formula: see text] As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed. MDPI 2022-10-12 /pmc/articles/PMC9607536/ /pubmed/36296766 http://dx.doi.org/10.3390/nano12203571 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tuktamyshev, Artur
Vichi, Stefano
Cesura, Federico Guido
Fedorov, Alexey
Carminati, Giuseppe
Lambardi, Davide
Pedrini, Jacopo
Vitiello, Elisa
Pezzoli, Fabio
Bietti, Sergio
Sanguinetti, Stefano
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
title Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
title_full Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
title_fullStr Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
title_full_unstemmed Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
title_short Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
title_sort strain relaxation of inas quantum dots on misoriented inalas(111) metamorphic substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607536/
https://www.ncbi.nlm.nih.gov/pubmed/36296766
http://dx.doi.org/10.3390/nano12203571
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