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Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)

Fusarium wilt, caused by Fusarium oxysporum f. sp. cucumerinum (Fo), is a severe soil-borne disease affecting cucumber production worldwide, particularly under monocropping in greenhouses. Silicon (Si) plays an important role in improving the resistance of crops to Fusarium wilt, but the underlying...

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Autores principales: Sun, Shuangsheng, Yang, Zhengkun, Song, Zhiyu, Wang, Nannan, Guo, Ning, Niu, Jinghan, Liu, Airong, Bai, Bing, Ahammed, Golam Jalal, Chen, Shuangchen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608603/
https://www.ncbi.nlm.nih.gov/pubmed/36311065
http://dx.doi.org/10.3389/fpls.2022.1011859
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author Sun, Shuangsheng
Yang, Zhengkun
Song, Zhiyu
Wang, Nannan
Guo, Ning
Niu, Jinghan
Liu, Airong
Bai, Bing
Ahammed, Golam Jalal
Chen, Shuangchen
author_facet Sun, Shuangsheng
Yang, Zhengkun
Song, Zhiyu
Wang, Nannan
Guo, Ning
Niu, Jinghan
Liu, Airong
Bai, Bing
Ahammed, Golam Jalal
Chen, Shuangchen
author_sort Sun, Shuangsheng
collection PubMed
description Fusarium wilt, caused by Fusarium oxysporum f. sp. cucumerinum (Fo), is a severe soil-borne disease affecting cucumber production worldwide, particularly under monocropping in greenhouses. Silicon (Si) plays an important role in improving the resistance of crops to Fusarium wilt, but the underlying mechanism is largely unclear. Here, an in vitro study showed that 3 mmol·l(-1) Si had the best inhibitory effect on the mycelial growth of F. oxysporum in potato dextrose agar (PDA) culture for 7 days. Subsequently, the occurrence of cucumber wilt disease and its mechanisms were investigated upon treatments with exogenous silicon under soil culture. The plant height, stem diameter, root length, and root activity under Si+Fo treatment increased significantly by 39.53%, 94.87%, 74.32%, and 95.11% compared with Fo only. Importantly, the control efficiency of Si+Fo was 69.31% compared with that of Fo treatment. Compared with Fo, the activities of peroxidase (POD), catalase (CAT), and ascorbate peroxidase (APX) significantly increased by 148.92%, 26.47%, and 58.54%, while the contents of H(2)O(2), [Formula: see text] , and malondialdehyde (MDA) notably decreased by 21.67%, 59.67%, and 38.701%, respectively, in roots of cucumber plants treated with Si + Fo. Compared with Fo treatment, the net photosynthesis rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), maximum RuBisCO carboxylation rates (Vcmax), maximum RuBP regeneration rates (Jmax), and activities of ribulose-1,5-bisphosphate carboxylase (RuBisCO), fructose-1,6-bisphosphatase (FBPase), and glyceraldehyde-3-phosphate dehydrogenase (GAPDH) and the expression of FBPA, TPI, SBPase, and FBPase in Si+Fo treatment increased significantly. Furthermore, Si alleviated stomatal closure and enhanced endogenous silicon content compared with only Fo inoculation. The study results suggest that exogenous silicon application improves cucumber resistance to Fusarium wilt by stimulating the antioxidant system, photosynthetic capacity, and stomatal movement in cucumber leaves. This study brings new insights into the potential of Si application in boosting cucumber resistance against Fusarium wilt with a bright prospect for Si use in cucumber production under greenhouse conditions.
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spelling pubmed-96086032022-10-28 Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.) Sun, Shuangsheng Yang, Zhengkun Song, Zhiyu Wang, Nannan Guo, Ning Niu, Jinghan Liu, Airong Bai, Bing Ahammed, Golam Jalal Chen, Shuangchen Front Plant Sci Plant Science Fusarium wilt, caused by Fusarium oxysporum f. sp. cucumerinum (Fo), is a severe soil-borne disease affecting cucumber production worldwide, particularly under monocropping in greenhouses. Silicon (Si) plays an important role in improving the resistance of crops to Fusarium wilt, but the underlying mechanism is largely unclear. Here, an in vitro study showed that 3 mmol·l(-1) Si had the best inhibitory effect on the mycelial growth of F. oxysporum in potato dextrose agar (PDA) culture for 7 days. Subsequently, the occurrence of cucumber wilt disease and its mechanisms were investigated upon treatments with exogenous silicon under soil culture. The plant height, stem diameter, root length, and root activity under Si+Fo treatment increased significantly by 39.53%, 94.87%, 74.32%, and 95.11% compared with Fo only. Importantly, the control efficiency of Si+Fo was 69.31% compared with that of Fo treatment. Compared with Fo, the activities of peroxidase (POD), catalase (CAT), and ascorbate peroxidase (APX) significantly increased by 148.92%, 26.47%, and 58.54%, while the contents of H(2)O(2), [Formula: see text] , and malondialdehyde (MDA) notably decreased by 21.67%, 59.67%, and 38.701%, respectively, in roots of cucumber plants treated with Si + Fo. Compared with Fo treatment, the net photosynthesis rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), maximum RuBisCO carboxylation rates (Vcmax), maximum RuBP regeneration rates (Jmax), and activities of ribulose-1,5-bisphosphate carboxylase (RuBisCO), fructose-1,6-bisphosphatase (FBPase), and glyceraldehyde-3-phosphate dehydrogenase (GAPDH) and the expression of FBPA, TPI, SBPase, and FBPase in Si+Fo treatment increased significantly. Furthermore, Si alleviated stomatal closure and enhanced endogenous silicon content compared with only Fo inoculation. The study results suggest that exogenous silicon application improves cucumber resistance to Fusarium wilt by stimulating the antioxidant system, photosynthetic capacity, and stomatal movement in cucumber leaves. This study brings new insights into the potential of Si application in boosting cucumber resistance against Fusarium wilt with a bright prospect for Si use in cucumber production under greenhouse conditions. Frontiers Media S.A. 2022-10-13 /pmc/articles/PMC9608603/ /pubmed/36311065 http://dx.doi.org/10.3389/fpls.2022.1011859 Text en Copyright © 2022 Sun, Yang, Song, Wang, Guo, Niu, Liu, Bai, Ahammed and Chen https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
spellingShingle Plant Science
Sun, Shuangsheng
Yang, Zhengkun
Song, Zhiyu
Wang, Nannan
Guo, Ning
Niu, Jinghan
Liu, Airong
Bai, Bing
Ahammed, Golam Jalal
Chen, Shuangchen
Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)
title Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)
title_full Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)
title_fullStr Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)
title_full_unstemmed Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)
title_short Silicon enhances plant resistance to Fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (Cucumis sativus L.)
title_sort silicon enhances plant resistance to fusarium wilt by promoting antioxidant potential and photosynthetic capacity in cucumber (cucumis sativus l.)
topic Plant Science
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608603/
https://www.ncbi.nlm.nih.gov/pubmed/36311065
http://dx.doi.org/10.3389/fpls.2022.1011859
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