Cargando…
A Vertical Single Transistor Neuron with Core–Shell Dual-Gate for Excitatory–Inhibitory Function and Tunable Firing Threshold Voltage
A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed shell gate and core gate to serve an excitatory–i...
Autores principales: | Lee, Taegoon, Jeon, Seung-Bae, Kim, Daewon |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9609599/ https://www.ncbi.nlm.nih.gov/pubmed/36296091 http://dx.doi.org/10.3390/mi13101740 |
Ejemplares similares
-
Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors
por: Tseng, Robert, et al.
Publicado: (2023) -
Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors
por: Nazir, Ghazanfar, et al.
Publicado: (2017) -
Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation
por: Dou, Wei, et al.
Publicado: (2020) -
Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
por: Yoon, Jun-Sik, et al.
Publicado: (2017) -
Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors
por: Choi, Junhwan, et al.
Publicado: (2022)