Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content

This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p(+)-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow rate (OFR) during indium...

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Detalles Bibliográficos
Autores principales: Kim, Donguk, Lee, Hee Jun, Yang, Tae Jun, Choi, Woo Sik, Kim, Changwook, Choi, Sung-Jin, Bae, Jong-Ho, Kim, Dong Myong, Kim, Sungjun, Kim, Dae Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610060/
https://www.ncbi.nlm.nih.gov/pubmed/36295983
http://dx.doi.org/10.3390/mi13101630
Descripción
Sumario:This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p(+)-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow rate (OFR) during indium gallium zinc oxide (IGZO) deposition. The short- and long-term components in the potentiation and depression curves are modeled by considering the process (OFR of IGZO) and bias conditions. The compact SPICE model with the physical mechanism of SiO(2) modulation is introduced, which can be useful for optimizing the specification of memristor devices.

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