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Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure

Transceivers that function under a high-speed rate (over 200 Gb/s) need to have more optical power ability to overcome the power losses which is a reason for using a larger RF line connected to a Mach–Zehnder modulator for obtaining high data bitrate communication. One option to solve this problem i...

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Detalles Bibliográficos
Autores principales: Katash, Netanel, Khateeb, Salman, Malka, Dror
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610199/
https://www.ncbi.nlm.nih.gov/pubmed/36296033
http://dx.doi.org/10.3390/mi13101680
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author Katash, Netanel
Khateeb, Salman
Malka, Dror
author_facet Katash, Netanel
Khateeb, Salman
Malka, Dror
author_sort Katash, Netanel
collection PubMed
description Transceivers that function under a high-speed rate (over 200 Gb/s) need to have more optical power ability to overcome the power losses which is a reason for using a larger RF line connected to a Mach–Zehnder modulator for obtaining high data bitrate communication. One option to solve this problem is to use a complex laser with a power of over 100 milliwatts. However, this option can be complicated for a photonic chip circuit due to the high cost and nonlinear effects, which can increase the system noise. Therefore, we propose a better solution to increase the power level using a 4 × 1 power combiner which is based on multimode interference (MMI) using a silicon nitride (Si(3)N(4)) slot waveguide structure. The combiner was solved using the full-vectorial beam propagation method (FV-BPM), and the key parameters were analyzed using Matlab script codes. Results show that the combiner can function well over the O-band spectrum with high combiner efficiency of at least 98.2% after a short light coupling propagation of 28.78 μm. This new study shows how it is possible to obtain a transverse electric mode solution for four Gaussian coherent sources using Si(3)N(4) slot waveguide technology. Furthermore, the back reflection (BR) was solved using a finite difference time-domain method, and the result shows a low BR of 40.15 dB. This new technology can be utilized for combining multiple coherent sources that work with a photonic chip at the O-band range.
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spelling pubmed-96101992022-10-28 Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure Katash, Netanel Khateeb, Salman Malka, Dror Micromachines (Basel) Article Transceivers that function under a high-speed rate (over 200 Gb/s) need to have more optical power ability to overcome the power losses which is a reason for using a larger RF line connected to a Mach–Zehnder modulator for obtaining high data bitrate communication. One option to solve this problem is to use a complex laser with a power of over 100 milliwatts. However, this option can be complicated for a photonic chip circuit due to the high cost and nonlinear effects, which can increase the system noise. Therefore, we propose a better solution to increase the power level using a 4 × 1 power combiner which is based on multimode interference (MMI) using a silicon nitride (Si(3)N(4)) slot waveguide structure. The combiner was solved using the full-vectorial beam propagation method (FV-BPM), and the key parameters were analyzed using Matlab script codes. Results show that the combiner can function well over the O-band spectrum with high combiner efficiency of at least 98.2% after a short light coupling propagation of 28.78 μm. This new study shows how it is possible to obtain a transverse electric mode solution for four Gaussian coherent sources using Si(3)N(4) slot waveguide technology. Furthermore, the back reflection (BR) was solved using a finite difference time-domain method, and the result shows a low BR of 40.15 dB. This new technology can be utilized for combining multiple coherent sources that work with a photonic chip at the O-band range. MDPI 2022-10-06 /pmc/articles/PMC9610199/ /pubmed/36296033 http://dx.doi.org/10.3390/mi13101680 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Katash, Netanel
Khateeb, Salman
Malka, Dror
Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
title Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
title_full Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
title_fullStr Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
title_full_unstemmed Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
title_short Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
title_sort combining four gaussian lasers using silicon nitride mmi slot waveguide structure
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610199/
https://www.ncbi.nlm.nih.gov/pubmed/36296033
http://dx.doi.org/10.3390/mi13101680
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