Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulat...

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Detalles Bibliográficos
Autores principales: Zhang, Lili, Liu, Yuxuan, Fang, Junpeng, Liu, Yanjuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611415/
https://www.ncbi.nlm.nih.gov/pubmed/36296123
http://dx.doi.org/10.3390/mi13101770
Descripción
Sumario:In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.

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