Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulat...

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Detalles Bibliográficos
Autores principales: Zhang, Lili, Liu, Yuxuan, Fang, Junpeng, Liu, Yanjuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611415/
https://www.ncbi.nlm.nih.gov/pubmed/36296123
http://dx.doi.org/10.3390/mi13101770
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author Zhang, Lili
Liu, Yuxuan
Fang, Junpeng
Liu, Yanjuan
author_facet Zhang, Lili
Liu, Yuxuan
Fang, Junpeng
Liu, Yanjuan
author_sort Zhang, Lili
collection PubMed
description In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.
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spelling pubmed-96114152022-10-28 Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction Zhang, Lili Liu, Yuxuan Fang, Junpeng Liu, Yanjuan Micromachines (Basel) Article In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability. MDPI 2022-10-18 /pmc/articles/PMC9611415/ /pubmed/36296123 http://dx.doi.org/10.3390/mi13101770 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Lili
Liu, Yuxuan
Fang, Junpeng
Liu, Yanjuan
Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
title Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
title_full Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
title_fullStr Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
title_full_unstemmed Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
title_short Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
title_sort investigation of a 4h-sic trench mosfet with back-side super junction
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611415/
https://www.ncbi.nlm.nih.gov/pubmed/36296123
http://dx.doi.org/10.3390/mi13101770
work_keys_str_mv AT zhanglili investigationofa4hsictrenchmosfetwithbacksidesuperjunction
AT liuyuxuan investigationofa4hsictrenchmosfetwithbacksidesuperjunction
AT fangjunpeng investigationofa4hsictrenchmosfetwithbacksidesuperjunction
AT liuyanjuan investigationofa4hsictrenchmosfetwithbacksidesuperjunction

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