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Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures

[Image: see text] Hybrid van der Waals heterostructures based on 2D materials and/or organic thin films are being evaluated as potential functional devices for a variety of applications. In this context, the graphene/organic semiconductor (Gr/OSC) heterostructure could represent the core element to...

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Autores principales: Oswald, Jacopo, Beretta, Davide, Stiefel, Michael, Furrer, Roman, Romio, Alessia, Mansour, Michel Daher, Vuillaume, Dominique, Calame, Michel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9614726/
https://www.ncbi.nlm.nih.gov/pubmed/36239396
http://dx.doi.org/10.1021/acsami.2c13148
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author Oswald, Jacopo
Beretta, Davide
Stiefel, Michael
Furrer, Roman
Romio, Alessia
Mansour, Michel Daher
Vuillaume, Dominique
Calame, Michel
author_facet Oswald, Jacopo
Beretta, Davide
Stiefel, Michael
Furrer, Roman
Romio, Alessia
Mansour, Michel Daher
Vuillaume, Dominique
Calame, Michel
author_sort Oswald, Jacopo
collection PubMed
description [Image: see text] Hybrid van der Waals heterostructures based on 2D materials and/or organic thin films are being evaluated as potential functional devices for a variety of applications. In this context, the graphene/organic semiconductor (Gr/OSC) heterostructure could represent the core element to build future vertical organic transistors based on two back-to-back Gr/OSC diodes sharing a common graphene sheet, which functions as the base electrode. However, the assessment of the Gr/OSC potential still requires a deeper understanding of the charge carrier transport across the interface as well as the development of wafer-scale fabrication methods. This work investigates the charge injection and transport across Au/OSC/Gr vertical heterostructures, focusing on poly(3-hexylthiophen-2,5-diyl) as the OSC, where the PMMA-free graphene layer functions as the top electrode. The structures are fabricated using a combination of processes widely exploited in semiconductor manufacturing and therefore are suited for industrial upscaling. Temperature-dependent current–voltage measurements and impedance spectroscopy show that the charge transport across both device interfaces is injection-limited by thermionic emission at high bias, while it is space charge limited at low bias, and that the P3HT can be assumed fully depleted in the high bias regime. From the space charge limited model, the out-of-plane charge carrier mobility in P3HT is found to be equal to μ ≈ 2.8 × 10(–4) cm(2) V(–1) s(–1), similar to the in-plane mobility reported in previous works, while the charge carrier density is N(0) ≈ 1.16 × 10(15) cm(–3), also in agreement with previously reported values. From the thermionic emission model, the energy barriers at the Gr/P3HT and Au/P3HT interfaces result in 0.30 eV and 0.25 eV, respectively. Based on the measured barriers heights, the energy band diagram of the vertical heterostructure is proposed under the hypothesis that P3HT is fully depleted.
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spelling pubmed-96147262022-10-29 Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures Oswald, Jacopo Beretta, Davide Stiefel, Michael Furrer, Roman Romio, Alessia Mansour, Michel Daher Vuillaume, Dominique Calame, Michel ACS Appl Mater Interfaces [Image: see text] Hybrid van der Waals heterostructures based on 2D materials and/or organic thin films are being evaluated as potential functional devices for a variety of applications. In this context, the graphene/organic semiconductor (Gr/OSC) heterostructure could represent the core element to build future vertical organic transistors based on two back-to-back Gr/OSC diodes sharing a common graphene sheet, which functions as the base electrode. However, the assessment of the Gr/OSC potential still requires a deeper understanding of the charge carrier transport across the interface as well as the development of wafer-scale fabrication methods. This work investigates the charge injection and transport across Au/OSC/Gr vertical heterostructures, focusing on poly(3-hexylthiophen-2,5-diyl) as the OSC, where the PMMA-free graphene layer functions as the top electrode. The structures are fabricated using a combination of processes widely exploited in semiconductor manufacturing and therefore are suited for industrial upscaling. Temperature-dependent current–voltage measurements and impedance spectroscopy show that the charge transport across both device interfaces is injection-limited by thermionic emission at high bias, while it is space charge limited at low bias, and that the P3HT can be assumed fully depleted in the high bias regime. From the space charge limited model, the out-of-plane charge carrier mobility in P3HT is found to be equal to μ ≈ 2.8 × 10(–4) cm(2) V(–1) s(–1), similar to the in-plane mobility reported in previous works, while the charge carrier density is N(0) ≈ 1.16 × 10(15) cm(–3), also in agreement with previously reported values. From the thermionic emission model, the energy barriers at the Gr/P3HT and Au/P3HT interfaces result in 0.30 eV and 0.25 eV, respectively. Based on the measured barriers heights, the energy band diagram of the vertical heterostructure is proposed under the hypothesis that P3HT is fully depleted. American Chemical Society 2022-10-14 2022-10-26 /pmc/articles/PMC9614726/ /pubmed/36239396 http://dx.doi.org/10.1021/acsami.2c13148 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Oswald, Jacopo
Beretta, Davide
Stiefel, Michael
Furrer, Roman
Romio, Alessia
Mansour, Michel Daher
Vuillaume, Dominique
Calame, Michel
Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures
title Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures
title_full Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures
title_fullStr Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures
title_full_unstemmed Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures
title_short Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures
title_sort charge transport across au–p3ht–graphene van der waals vertical heterostructures
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9614726/
https://www.ncbi.nlm.nih.gov/pubmed/36239396
http://dx.doi.org/10.1021/acsami.2c13148
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