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Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing

Redox-based memristive devices have shown great potential for application in neuromorphic computing systems. However, the demands on the device characteristics depend on the implemented computational scheme and unifying the desired properties in one stable device is still challenging. Understanding...

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Detalles Bibliográficos
Autores principales:	Park, Seongae, Spetzler, Benjamin, Ivanov, Tzvetan, Ziegler, Martin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9617901/ https://www.ncbi.nlm.nih.gov/pubmed/36309573 http://dx.doi.org/10.1038/s41598-022-22907-5

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