Cargando…
Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field
The displacement damage dose (DDD) is a common index used to predict the life of semiconductor devices employed in space-based environments where they will be exposed to radiation. The DDD is commonly estimated from the non-ionizing energy loss based on the Norgett-Robinson-Torrens (NRT) model, alth...
Autores principales: | Iwamoto, Yosuke, Sato, Tatsuhiko |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Public Library of Science
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9632926/ https://www.ncbi.nlm.nih.gov/pubmed/36327233 http://dx.doi.org/10.1371/journal.pone.0276364 |
Ejemplares similares
-
Improving atomic displacement and replacement calculations with physically realistic damage models
por: Nordlund, Kai, et al.
Publicado: (2018) -
Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
por: Abiram, Gnanasampanthan, et al.
Publicado: (2022) -
Reversible displacive transformation in MnTe polymorphic semiconductor
por: Mori, Shunsuke, et al.
Publicado: (2020) -
Development of compound semiconductors for planetary and astrophysics space missions
por: Owens, A, et al.
Publicado: (2000) -
Method for Tunnel Displacements Calculation Based on Mobile Tunnel Monitoring System
por: Yue, Zeyu, et al.
Publicado: (2021)