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Highly efficient ultra-broad beam silicon nanophotonic antenna based on near-field phase engineering

Optical antennas are a fundamental element in optical phased arrays (OPA) and free-space optical interconnects. An outstanding challenge in optical antenna design lies in achieving high radiation efficiency, ultra-compact footprint and broad radiation angle simultaneously, as required for dense 2D O...

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Detalles Bibliográficos
Autores principales: Khajavi, Shahrzad, Melati, Daniele, Cheben, Pavel, Schmid, Jens H., Ramos, Carlos A. Alonso, Ye, Winnie N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9637215/
https://www.ncbi.nlm.nih.gov/pubmed/36335199
http://dx.doi.org/10.1038/s41598-022-23460-x
Descripción
Sumario:Optical antennas are a fundamental element in optical phased arrays (OPA) and free-space optical interconnects. An outstanding challenge in optical antenna design lies in achieving high radiation efficiency, ultra-compact footprint and broad radiation angle simultaneously, as required for dense 2D OPAs with a broad steering range. Here, we demonstrate a fundamentally new concept of a nanophotonic antenna based on near-field phase-engineering. By introducing a specific near-field phase factor in the Fraunhofer transformation, the far-field beam is widened beyond the diffraction limit for a given aperture size. We use transversally interleaved subwavelength grating nanostructures to control the near-field phase. A Bragg reflector is used at the end of the grating to increase both the efficiency and the far-field beam width. The antenna has a compact footprint of 3.1 µm × 1.75 µm and an ultra-broad far-field beam width of 52° and 62° in the longitudinal and transversal direction, respectively, while the radiation efficiency reaches 82% after incorporating a bottom reflector to further improve the directionality. This unprecedented design performance is achieved with a single-etch grating nanostructure in a 300-nm SOI platform.