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Electrical Properties of Thin ZrSe(3) Films for Device Applications

[Image: see text] Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe(3) are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by at...

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Detalles Bibliográficos
Autores principales:	Thole, Lars, Belke, Christopher, Locmelis, Sonja, Behrens, Peter, Haug, Rolf J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2022
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9647732/ https://www.ncbi.nlm.nih.gov/pubmed/36385852 http://dx.doi.org/10.1021/acsomega.2c04198

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