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Josephson Diode Effect in High-Mobility InSb Nanoflags
[Image: see text] We report nonreciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. Thus, these devices can work as Josephson dio...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9650771/ https://www.ncbi.nlm.nih.gov/pubmed/36285780 http://dx.doi.org/10.1021/acs.nanolett.2c02899 |
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author | Turini, Bianca Salimian, Sedighe Carrega, Matteo Iorio, Andrea Strambini, Elia Giazotto, Francesco Zannier, Valentina Sorba, Lucia Heun, Stefan |
author_facet | Turini, Bianca Salimian, Sedighe Carrega, Matteo Iorio, Andrea Strambini, Elia Giazotto, Francesco Zannier, Valentina Sorba, Lucia Heun, Stefan |
author_sort | Turini, Bianca |
collection | PubMed |
description | [Image: see text] We report nonreciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. Thus, these devices can work as Josephson diodes, with dissipation-less current flowing in only one direction. For small fields, the supercurrent asymmetry increases linearly with external field, and then it saturates as the Zeeman energy becomes relevant, before it finally decreases to zero at higher fields. The effect is maximum when the in-plane field is perpendicular to the current vector, which identifies Rashba spin–orbit coupling as the main symmetry-breaking mechanism. While a variation in carrier concentration in these high-quality InSb nanoflags does not significantly influence the supercurrent asymmetry, it is instead strongly suppressed by an increase in temperature. Our experimental findings are consistent with a model for ballistic short junctions and show that the diode effect is intrinsic to this material. |
format | Online Article Text |
id | pubmed-9650771 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-96507712022-11-15 Josephson Diode Effect in High-Mobility InSb Nanoflags Turini, Bianca Salimian, Sedighe Carrega, Matteo Iorio, Andrea Strambini, Elia Giazotto, Francesco Zannier, Valentina Sorba, Lucia Heun, Stefan Nano Lett [Image: see text] We report nonreciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. Thus, these devices can work as Josephson diodes, with dissipation-less current flowing in only one direction. For small fields, the supercurrent asymmetry increases linearly with external field, and then it saturates as the Zeeman energy becomes relevant, before it finally decreases to zero at higher fields. The effect is maximum when the in-plane field is perpendicular to the current vector, which identifies Rashba spin–orbit coupling as the main symmetry-breaking mechanism. While a variation in carrier concentration in these high-quality InSb nanoflags does not significantly influence the supercurrent asymmetry, it is instead strongly suppressed by an increase in temperature. Our experimental findings are consistent with a model for ballistic short junctions and show that the diode effect is intrinsic to this material. American Chemical Society 2022-10-26 2022-11-09 /pmc/articles/PMC9650771/ /pubmed/36285780 http://dx.doi.org/10.1021/acs.nanolett.2c02899 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Turini, Bianca Salimian, Sedighe Carrega, Matteo Iorio, Andrea Strambini, Elia Giazotto, Francesco Zannier, Valentina Sorba, Lucia Heun, Stefan Josephson Diode Effect in High-Mobility InSb Nanoflags |
title | Josephson Diode
Effect in High-Mobility InSb Nanoflags |
title_full | Josephson Diode
Effect in High-Mobility InSb Nanoflags |
title_fullStr | Josephson Diode
Effect in High-Mobility InSb Nanoflags |
title_full_unstemmed | Josephson Diode
Effect in High-Mobility InSb Nanoflags |
title_short | Josephson Diode
Effect in High-Mobility InSb Nanoflags |
title_sort | josephson diode
effect in high-mobility insb nanoflags |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9650771/ https://www.ncbi.nlm.nih.gov/pubmed/36285780 http://dx.doi.org/10.1021/acs.nanolett.2c02899 |
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