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Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications
Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653463/ https://www.ncbi.nlm.nih.gov/pubmed/36371590 http://dx.doi.org/10.1038/s41598-022-23629-4 |
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author | Carapezzi, Stefania Delacour, Corentin Plews, Andrew Nejim, Ahmed Karg, Siegfried Todri-Sanial, Aida |
author_facet | Carapezzi, Stefania Delacour, Corentin Plews, Andrew Nejim, Ahmed Karg, Siegfried Todri-Sanial, Aida |
author_sort | Carapezzi, Stefania |
collection | PubMed |
description | Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO[Formula: see text] ) to accurately investigate the interplay among Joule effect, heat dissipation and the external temperature [Formula: see text] over their resistive switching mechanism. In particular, we extract from our simulations a simplified model for the effect of [Formula: see text] over the negative differential resistance (NDR) region of such devices. The NDR of VO[Formula: see text] devices is pivotal for building VO[Formula: see text] oscillators, which have been recently shown to be essential elements of oscillatory neural networks (ONNs). ONNs are innovative neuromorphic circuits that harness oscillators’ phases to compute. Our simulations quantify the impact of [Formula: see text] over figures of merit of VO[Formula: see text] oscillator, such as frequency, voltage amplitude and average power per cycle. Our findings shed light over the interlinked thermal and electrical behavior of VO[Formula: see text] volatile memristors and oscillators, and provide a roadmap for the development of ONN technology. |
format | Online Article Text |
id | pubmed-9653463 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-96534632022-11-15 Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications Carapezzi, Stefania Delacour, Corentin Plews, Andrew Nejim, Ahmed Karg, Siegfried Todri-Sanial, Aida Sci Rep Article Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO[Formula: see text] ) to accurately investigate the interplay among Joule effect, heat dissipation and the external temperature [Formula: see text] over their resistive switching mechanism. In particular, we extract from our simulations a simplified model for the effect of [Formula: see text] over the negative differential resistance (NDR) region of such devices. The NDR of VO[Formula: see text] devices is pivotal for building VO[Formula: see text] oscillators, which have been recently shown to be essential elements of oscillatory neural networks (ONNs). ONNs are innovative neuromorphic circuits that harness oscillators’ phases to compute. Our simulations quantify the impact of [Formula: see text] over figures of merit of VO[Formula: see text] oscillator, such as frequency, voltage amplitude and average power per cycle. Our findings shed light over the interlinked thermal and electrical behavior of VO[Formula: see text] volatile memristors and oscillators, and provide a roadmap for the development of ONN technology. Nature Publishing Group UK 2022-11-12 /pmc/articles/PMC9653463/ /pubmed/36371590 http://dx.doi.org/10.1038/s41598-022-23629-4 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Carapezzi, Stefania Delacour, Corentin Plews, Andrew Nejim, Ahmed Karg, Siegfried Todri-Sanial, Aida Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
title | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
title_full | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
title_fullStr | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
title_full_unstemmed | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
title_short | Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
title_sort | role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653463/ https://www.ncbi.nlm.nih.gov/pubmed/36371590 http://dx.doi.org/10.1038/s41598-022-23629-4 |
work_keys_str_mv | AT carapezzistefania roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT delacourcorentin roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT plewsandrew roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT nejimahmed roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT kargsiegfried roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications AT todrisanialaida roleofambienttemperatureinmodulationofbehaviorofvanadiumdioxidevolatilememristorsandoscillatorsforneuromorphicapplications |