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VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
The strongly correlated electron material, vanadium dioxide (VO [Formula: see text]), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V [Formula: see text] O [Formula: see text]...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653758/ https://www.ncbi.nlm.nih.gov/pubmed/36363246 http://dx.doi.org/10.3390/ma15217652 |
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author | Walls, Brian Murtagh, Oisín Bozhko, Sergey I. Ionov, Andrei Mazilkin, Andrey A. Mullarkey, Daragh Zhussupbekova, Ainur Shulyatev, Dmitry A. Zhussupbekov, Kuanysh Andreev, Nikolai Tabachkova, Nataliya Shvets, Igor V. |
author_facet | Walls, Brian Murtagh, Oisín Bozhko, Sergey I. Ionov, Andrei Mazilkin, Andrey A. Mullarkey, Daragh Zhussupbekova, Ainur Shulyatev, Dmitry A. Zhussupbekov, Kuanysh Andreev, Nikolai Tabachkova, Nataliya Shvets, Igor V. |
author_sort | Walls, Brian |
collection | PubMed |
description | The strongly correlated electron material, vanadium dioxide (VO [Formula: see text]), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V [Formula: see text] O [Formula: see text] (010) single crystal results in Wadsley phases (V [Formula: see text] O [Formula: see text] , n > 1) and VO [Formula: see text]. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO [Formula: see text]. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO [Formula: see text] devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V [Formula: see text] O [Formula: see text] , VO [Formula: see text] and V [Formula: see text] O [Formula: see text] crystallites. Percolation paths incorporating both VO [Formula: see text] and metallic V [Formula: see text] O [Formula: see text] are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching. |
format | Online Article Text |
id | pubmed-9653758 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96537582022-11-15 VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching Walls, Brian Murtagh, Oisín Bozhko, Sergey I. Ionov, Andrei Mazilkin, Andrey A. Mullarkey, Daragh Zhussupbekova, Ainur Shulyatev, Dmitry A. Zhussupbekov, Kuanysh Andreev, Nikolai Tabachkova, Nataliya Shvets, Igor V. Materials (Basel) Article The strongly correlated electron material, vanadium dioxide (VO [Formula: see text]), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V [Formula: see text] O [Formula: see text] (010) single crystal results in Wadsley phases (V [Formula: see text] O [Formula: see text] , n > 1) and VO [Formula: see text]. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO [Formula: see text]. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO [Formula: see text] devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V [Formula: see text] O [Formula: see text] , VO [Formula: see text] and V [Formula: see text] O [Formula: see text] crystallites. Percolation paths incorporating both VO [Formula: see text] and metallic V [Formula: see text] O [Formula: see text] are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching. MDPI 2022-10-31 /pmc/articles/PMC9653758/ /pubmed/36363246 http://dx.doi.org/10.3390/ma15217652 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Walls, Brian Murtagh, Oisín Bozhko, Sergey I. Ionov, Andrei Mazilkin, Andrey A. Mullarkey, Daragh Zhussupbekova, Ainur Shulyatev, Dmitry A. Zhussupbekov, Kuanysh Andreev, Nikolai Tabachkova, Nataliya Shvets, Igor V. VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching |
title | VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching |
title_full | VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching |
title_fullStr | VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching |
title_full_unstemmed | VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching |
title_short | VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching |
title_sort | vo(x) phase mixture of reduced single crystalline v(2)o(5): vo(2) resistive switching |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653758/ https://www.ncbi.nlm.nih.gov/pubmed/36363246 http://dx.doi.org/10.3390/ma15217652 |
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