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VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching

The strongly correlated electron material, vanadium dioxide (VO [Formula: see text]), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V [Formula: see text] O [Formula: see text]...

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Autores principales: Walls, Brian, Murtagh, Oisín, Bozhko, Sergey I., Ionov, Andrei, Mazilkin, Andrey A., Mullarkey, Daragh, Zhussupbekova, Ainur, Shulyatev, Dmitry A., Zhussupbekov, Kuanysh, Andreev, Nikolai, Tabachkova, Nataliya, Shvets, Igor V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653758/
https://www.ncbi.nlm.nih.gov/pubmed/36363246
http://dx.doi.org/10.3390/ma15217652
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author Walls, Brian
Murtagh, Oisín
Bozhko, Sergey I.
Ionov, Andrei
Mazilkin, Andrey A.
Mullarkey, Daragh
Zhussupbekova, Ainur
Shulyatev, Dmitry A.
Zhussupbekov, Kuanysh
Andreev, Nikolai
Tabachkova, Nataliya
Shvets, Igor V.
author_facet Walls, Brian
Murtagh, Oisín
Bozhko, Sergey I.
Ionov, Andrei
Mazilkin, Andrey A.
Mullarkey, Daragh
Zhussupbekova, Ainur
Shulyatev, Dmitry A.
Zhussupbekov, Kuanysh
Andreev, Nikolai
Tabachkova, Nataliya
Shvets, Igor V.
author_sort Walls, Brian
collection PubMed
description The strongly correlated electron material, vanadium dioxide (VO [Formula: see text]), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V [Formula: see text] O [Formula: see text] (010) single crystal results in Wadsley phases (V [Formula: see text] O [Formula: see text] , n > 1) and VO [Formula: see text]. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO [Formula: see text]. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO [Formula: see text] devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V [Formula: see text] O [Formula: see text] , VO [Formula: see text] and V [Formula: see text] O [Formula: see text] crystallites. Percolation paths incorporating both VO [Formula: see text] and metallic V [Formula: see text] O [Formula: see text] are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching.
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spelling pubmed-96537582022-11-15 VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching Walls, Brian Murtagh, Oisín Bozhko, Sergey I. Ionov, Andrei Mazilkin, Andrey A. Mullarkey, Daragh Zhussupbekova, Ainur Shulyatev, Dmitry A. Zhussupbekov, Kuanysh Andreev, Nikolai Tabachkova, Nataliya Shvets, Igor V. Materials (Basel) Article The strongly correlated electron material, vanadium dioxide (VO [Formula: see text]), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V [Formula: see text] O [Formula: see text] (010) single crystal results in Wadsley phases (V [Formula: see text] O [Formula: see text] , n > 1) and VO [Formula: see text]. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO [Formula: see text]. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO [Formula: see text] devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V [Formula: see text] O [Formula: see text] , VO [Formula: see text] and V [Formula: see text] O [Formula: see text] crystallites. Percolation paths incorporating both VO [Formula: see text] and metallic V [Formula: see text] O [Formula: see text] are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching. MDPI 2022-10-31 /pmc/articles/PMC9653758/ /pubmed/36363246 http://dx.doi.org/10.3390/ma15217652 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Walls, Brian
Murtagh, Oisín
Bozhko, Sergey I.
Ionov, Andrei
Mazilkin, Andrey A.
Mullarkey, Daragh
Zhussupbekova, Ainur
Shulyatev, Dmitry A.
Zhussupbekov, Kuanysh
Andreev, Nikolai
Tabachkova, Nataliya
Shvets, Igor V.
VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
title VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
title_full VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
title_fullStr VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
title_full_unstemmed VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
title_short VO(x) Phase Mixture of Reduced Single Crystalline V(2)O(5): VO(2) Resistive Switching
title_sort vo(x) phase mixture of reduced single crystalline v(2)o(5): vo(2) resistive switching
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653758/
https://www.ncbi.nlm.nih.gov/pubmed/36363246
http://dx.doi.org/10.3390/ma15217652
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