Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD with hole localization energy (E(loc)) sufficient f...

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Detalles Bibliográficos
Autores principales: Abramkin, Demid S., Atuchin, Victor V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654477/
https://www.ncbi.nlm.nih.gov/pubmed/36364571
http://dx.doi.org/10.3390/nano12213794

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654477/
https://www.ncbi.nlm.nih.gov/pubmed/36364571
http://dx.doi.org/10.3390/nano12213794

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