Low-Frequency Noise Characteristics in HfO(2)-Based Metal-Ferroelectric-Metal Capacitors

The transport mechanism of HfO(2)-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-relat...

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Detalles Bibliográficos
Autores principales: Im, Ki-Sik, Shin, Seungheon, Jang, Chan-Hee, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654821/
https://www.ncbi.nlm.nih.gov/pubmed/36363066
http://dx.doi.org/10.3390/ma15217475
Descripción
Sumario:The transport mechanism of HfO(2)-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (S(I)) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × S(I)/I(2) noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.

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