Low-Frequency Noise Characteristics in HfO(2)-Based Metal-Ferroelectric-Metal Capacitors

The transport mechanism of HfO(2)-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (S(I)) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × S(I)/I(2) noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.