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Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave

This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-called Stranski-Krastanow growth mechanism once a suf...

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Autor principal: Walther, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656008/
https://www.ncbi.nlm.nih.gov/pubmed/36364626
http://dx.doi.org/10.3390/nano12213850
_version_ 1784829326804385792
author Walther, Thomas
author_facet Walther, Thomas
author_sort Walther, Thomas
collection PubMed
description This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-called Stranski-Krastanow growth mechanism once a sufficient amount of indium has accumulated on the surface. Initially a perfectly flat wetting layer is formed. This strained layer then starts to roughen as strain increases, leading first to small, long-range surface undulations and then to tiny coherent islands. These continue to grow, accumulating indium both from the underlying wetting layer by lateral indium segregation and from within these islands by vertical segregation, which for InGaAs deposition results in an indium-enriched InGaAs alloy in the centre of the quantum dots. For pure InAs deposition, interdiffusion also results in an InGaAs alloy. Further deposition can lead to the formation of misfit dislocations that nucleate at the edges of the islands and are generally sought to be avoided. Overgrowth by GaAs or InGaAs alloys with low indium content commences preferentially between the islands, avoiding their strained edges, which initially leads to trench formation. Further deposition is necessary to cap these quantum dots effectively and to re-gain an almost flat surface that can then be used for subsequent deposition of multiple layers of quantum dots as needed for many optoelectronic devices.
format Online
Article
Text
id pubmed-9656008
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-96560082022-11-15 Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave Walther, Thomas Nanomaterials (Basel) Review This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-called Stranski-Krastanow growth mechanism once a sufficient amount of indium has accumulated on the surface. Initially a perfectly flat wetting layer is formed. This strained layer then starts to roughen as strain increases, leading first to small, long-range surface undulations and then to tiny coherent islands. These continue to grow, accumulating indium both from the underlying wetting layer by lateral indium segregation and from within these islands by vertical segregation, which for InGaAs deposition results in an indium-enriched InGaAs alloy in the centre of the quantum dots. For pure InAs deposition, interdiffusion also results in an InGaAs alloy. Further deposition can lead to the formation of misfit dislocations that nucleate at the edges of the islands and are generally sought to be avoided. Overgrowth by GaAs or InGaAs alloys with low indium content commences preferentially between the islands, avoiding their strained edges, which initially leads to trench formation. Further deposition is necessary to cap these quantum dots effectively and to re-gain an almost flat surface that can then be used for subsequent deposition of multiple layers of quantum dots as needed for many optoelectronic devices. MDPI 2022-10-31 /pmc/articles/PMC9656008/ /pubmed/36364626 http://dx.doi.org/10.3390/nano12213850 Text en © 2022 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Walther, Thomas
Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
title Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
title_full Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
title_fullStr Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
title_full_unstemmed Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
title_short Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
title_sort role of interdiffusion and segregation during the life of indium gallium arsenide quantum dots, from cradle to grave
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656008/
https://www.ncbi.nlm.nih.gov/pubmed/36364626
http://dx.doi.org/10.3390/nano12213850
work_keys_str_mv AT waltherthomas roleofinterdiffusionandsegregationduringthelifeofindiumgalliumarsenidequantumdotsfromcradletograve