Crystallinity Effect on Electrical Properties of PEALD–HfO(2) Thin Films Prepared by Different Substrate Temperatures

Hafnium oxide (HfO(2)) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO(2) films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle,...

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Detalles Bibliográficos
Autores principales: Zhang, Xiao-Ying, Han, Jing, Peng, Duan-Chen, Ruan, Yu-Jiao, Wu, Wan-Yu, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656191/
https://www.ncbi.nlm.nih.gov/pubmed/36364666
http://dx.doi.org/10.3390/nano12213890

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656191/
https://www.ncbi.nlm.nih.gov/pubmed/36364666
http://dx.doi.org/10.3390/nano12213890

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